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AIMDQ75R060M2HXTMA1

Name: Infineon AIMDQ75R060M2HXTMA1
Brand: Infineon Technologies
SKU: 726-AIMDQ75R060M2HXT
Price: 6.32 EUR
Availability: InStock

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Mouser No:

726-AIMDQ75R060M2HXT

Mfr. No:

AIMDQ75R060M2HXTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs CoolSiC Automotive Power Device 750 V G2

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

AIMDQ75R060M2HXTMA1 Datasheet (PDF)

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Learn more about Infineon Technologies AIMDQ75R060M2HXTMA1

In Stock: 485

Stock:: 485 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	6,32 €	6,32 €
	5,06 €	50,60 €
	4,09 €	409,00 €
	3,64 €	1.820,00 €
Full Reel (Order in multiples of 750)
	3,23 €	2.422,50 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PG-HDSOP-22
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	840 V
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	78 mOhms
Vgs - Gate-Source Voltage:	- 7 V to + 23 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Qg - Gate Charge:	20 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	128 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	5 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	5.6 ns
Factory Pack Quantity:	750
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	12.6 ns
Typical Turn-On Delay Time:	6.6 ns
Part # Aliases:	AIMDQ75R060M2H SP005982723

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Datasheet

AIMDQ75R060M2HXTMA1 Datasheet (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

CoolSiC™ G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ G2 Silicon Carbide MOSFETs allow an excellent level of SiC performance while fulfilling the highest quality standards in all common power scheme combinations (AC-DC, DC-DC, and DC-AC). SiC MOSFETs offer additional performance for photovoltaic inverters, energy storage systems, EV charging, power supplies, and motor drives, compared to Si alternatives. Infineon CoolSiC G2 MOSFETs further advance the unique XT interconnection technology (e.g., in discrete housings TO-263-7, TO-247-4) that overcomes the common challenge of improving semiconductor chip performance while maintaining thermal capability. The G2 thermal capability is 12% better, boosting the chip figures-of-merit to a robust level of SiC performance.

CoolSiC™ 750V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETs are designed to offer high efficiency, robustness against parasitic turn-on for unipolar gate driving, and reliability. These MOSFETs offer superior performance in Totem Pole, ANPC, Vienna rectifier, and FCC hard-switching topologies. The reduction in Output Capacitance (Coss) enables the MOSFETs to operate at higher switching frequencies in Cycloconverter, CLLC, DAB, and LLC soft switching topologies. The CoolSiC™ 750V G2 MOSFETs feature up to 78mΩ maximum drain-source on-resistance and switching losses through improved gate control. These MOSFETs are automotive and industrial qualified. Typical applications include EV charging infrastructure, telecom, circuit breakers, solid state relays, solar PV inverters, and HV‑LV DC-DC converters.