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AIMBG75R007M2HXTMA1

Name: Infineon AIMBG75R007M2HXTMA1
Brand: Infineon Technologies
SKU: 726-AIMBG75R007M2HXT
Price: 28.77 EUR
Availability: InStock

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Mouser No:

726-AIMBG75R007M2HXT

Mfr. No:

AIMBG75R007M2HXTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs CoolSiC Automotive Power Device 750 V G2

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

AIMBG75R007M2HXTMA1 Datasheet (PDF)

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Learn more about Infineon Technologies AIMBG75R007M2HXTMA1

In Stock: 760

Stock:: 760 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	28,77 €	28,77 €
	22,25 €	222,50 €
Full Reel (Order in multiples of 1000)
	20,36 €	20.360,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Series:	CoolSiC G2
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Channel Mode:	Enhancement
Configuration:	SIngle
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	10 ns
Forward Transconductance - Min:	78 S
Id - Continuous Drain Current:	198 A
Maximum Operating Temperature:	+ 175 C
Minimum Operating Temperature:	- 55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	TO-263-7
Pd - Power Dissipation:	651 W
Product:	MOSFET
Product Type:	SiC MOSFETS
Qg - Gate Charge:	169 nC
Rds On - Drain-Source Resistance:	9 mOhms
Rise Time:	18 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Tradename:	CoolSiC
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	Automotive Power Device
Typical Turn-Off Delay Time:	39 ns
Typical Turn-On Delay Time:	17 ns
Vds - Drain-Source Breakdown Voltage:	840 V
Vgs - Gate-Source Voltage:	- 7 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Part # Aliases:	AIMBG75R007M2H SP006087222

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Datasheet

AIMBG75R007M2HXTMA1 Datasheet (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

CoolSiC™ Automotive 750V G2 MOSFETs

Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs are engineered to meet the stringent demands of electric vehicle (EV) applications such as traction inverters, onboard chargers (OBC), and high-voltage DC/DC converters. These silicon carbide (SiC) MOSFETs deliver exceptional efficiency, power density, and thermal performance, enabling next-generation e-mobility systems. With a voltage rating of 750V and second-generation CoolSiC™ technology, these devices offer improved switching behavior and reduced losses compared to traditional silicon solutions. The portfolio includes a range of R_DS(on) values from 9mΩ to 78mΩ, providing flexibility for designers to optimize conduction and switching performance.