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1EDI30I12MHXUMA1

Name: Infineon 1EDI30I12MHXUMA1
Brand: Infineon Technologies
SKU: 726-1EDI30I12MHXUMA1
Price: 2.73 EUR
Availability: InStock

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Mouser No:

726-1EDI30I12MHXUMA1

Mfr. No:

1EDI30I12MHXUMA1

Mfr.:

Infineon Technologies

Description:

Gate Drivers 1200V Isolated 1-CH, 6A, UL, Miller clam

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

1EDI30I12MHXUMA1 Datasheet (PDF)

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Learn more about Infineon Technologies 1EDI30I12MHXUMA1

In Stock: 813

Stock:: 813 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,73 €	2,73 €
	2,04 €	20,40 €
	1,87 €	46,75 €
	1,68 €	168,00 €
	1,59 €	397,50 €
	1,55 €	775,00 €
Full Reel (Order in multiples of 1000)
	1,39 €	1.390,00 €
	1,33 €	2.660,00 €
	1,32 €	6.600,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	Gate Drivers
RoHS:
Product:	IGBT, MOSFET Gate Drivers
Type:	High-Side
Mounting Style:	SMD/SMT
Package/Case:	DSO-8
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Output Current:	3 A
Supply Voltage - Min:	3.1 V
Supply Voltage - Max:	17 V
Configuration:	Inverting, Non-Inverting
Rise Time:	10 ns
Fall Time:	9 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Series:	1ED Compact
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	DE
Logic Type:	CMOS
Maximum Turn-Off Delay Time:	330 ns
Maximum Turn-On Delay Time:	330 ns
Moisture Sensitive:	Yes
Pd - Power Dissipation:	400 mW
Product Type:	Gate Drivers
Propagation Delay - Max:	330 ns
Shutdown:	Shutdown
Factory Pack Quantity:	1000
Subcategory:	PMIC - Power Management ICs
Technology:	Si
Tradename:	EiceDRIVER
Part # Aliases:	1EDI30I12MH SP001287434
Unit Weight:	287,420 mg

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Datasheet

1EDI30I12MHXUMA1 Datasheet (PDF)

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Infineon's Latest Power and Sensing Guide (PDF)

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CNHTS:: 8542399000
USHTS:: 8542310075
ECCN:: EAR99

EiceDRIVER™ Isolated & Non-Isolated Gate Drivers

Infineon EiceDRIVER™ Isolated and Non-Isolated Gate Drivers provide optimized low- and high-voltage gate driver solutions for MOSFETs, IGBTs, and IGBT modules. These isolated and non-isolated gate driver ICs are designed to build reliable and efficient applications. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module. Infineon gate drivers provide a wide range of typical output current options, from 0.1A up to 10A, suitable for any power device size.

Infineon Automatic Opening Systems

Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds, and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths, as well as perform other functions.

1-Channel EiceDRIVER™ MOSFET Gate Driver ICs

Infineon Technologies 1-Channel EiceDRIVER™ MOSFET Gate Driver ICs are the crucial link between control ICs, powerful MOSFET, and GaN switching devices. These gate driver ICs enable high system-level efficiencies, excellent power density, and consistent system robustness.

Isolated Gate Drivers

Infineon Isolated Gate Drivers use magnetically coupled coreless transformer (CT) technology to transfer signals across galvanic isolation. These drivers offer functional basic, reinforced isolated, UL 1577, and VDE 0884 certified products. The isolation allows for very large voltage swings (e.g. ±1200V). These isolated drivers incorporate the most important key features and parameters for MOSFET, IGBT, IGBT modules, SiC MOSFET, and GaN HEMT driving.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.