1EDI3035ASXUMA1

Infineon Technologies
726-1EDI3035ASXUMA1
1EDI3035ASXUMA1

Mfr.:

Description:
Gate Drivers HVGD_TRACT

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Infineon Technologies 1EDI3035ASXUMA1

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
2.006
Factory Lead Time:
20
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
4,72 € 4,72 €
3,24 € 32,40 €
3,02 € 75,50 €
2,66 € 266,00 €
2,52 € 630,00 €
2,26 € 1.130,00 €
Full Reel (Order in multiples of 1000)
1,91 € 1.910,00 €
1,84 € 3.680,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: Gate Drivers
RoHS:  
MOSFET Drivers
High-Side, Low-Side
SMD/SMT
DSO-20
1 Output
15 A
3 V
5.5 V
Inverting, Non-Inverting
55 ns
45 ns
- 40 C
+ 150 C
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: DE
Moisture Sensitive: Yes
Operating Supply Current: 5 mA
Product Type: Gate Drivers
Propagation Delay - Max: 90 ns
Rds On - Drain-Source Resistance: 3 Ohms
Factory Pack Quantity: 1000
Subcategory: PMIC - Power Management ICs
Technology: SiC
Tradename: EiceDriver
Part # Aliases: 1EDI3035AS SP005741503
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Attributes selected: 0

Datasheet

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CNHTS:
8542399000
CAHTS:
8542310000
USHTS:
8542310030
ECCN:
EAR99

EiceDRIVER™ High-Voltage Gate Driver ICs

Infineon Technologies EiceDRIVER™ High-Voltage Gate Driver ICs for Electric Vehicle (EV) applications include automotive-qualified IGBT driver ICs and SiC MOSFET driver ICs. The Infineon Technologies EiceDRIVER™ High-Voltage Gate Driver ICs provide galvanic isolation and bidirectional signal transmission with high ambient temperature capability. The ICs enable extremely short propagation delays and support IGBT and SiC technologies up to 1200V. The devices incorporate key features/parameters to drive SiC MOSFETs such as an enhanced switching behavior (extended CMTI capability, fast propagation delay, switching frequency), wide output-side supply range, short internal dead time, and DESAT/OCP threshold level adaptation. Advanced monitoring and protection features facilitate the implementation of ISO 26262 functional safety requirements and provide stable operation in harsh EMC environments.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

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