LSIC1MO120E0080

IXYS
576-LSICMO120E0080
LSIC1MO120E0080

Mfr.:

Description:
SiC MOSFETs 1200V 80mOhm SiC MOSFET

ECAD Model:
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In Stock: 4.159

Stock:
4.159 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
16,95 € 16,95 €
13,36 € 133,60 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: SiC MOSFETs
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
39 A
80 mOhms
- 5 V, + 20 V
2.8 V
95 nC
- 55 C
+ 150 C
179 W
Enhancement
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 6 ns
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 10 ns
Series: LSIC1MO
Factory Pack Quantity: 450
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 16 ns
Typical Turn-On Delay Time: 10 ns
Unit Weight: 6 g
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541100090
USHTS:
8541290065
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99

SiC MOSFETs

Littelfuse SiC MOSFETs are optimized for high-frequency, high-efficiency applications. These robust SiC MOSFETs offer low gate charges, low output capacitance, and low gate resistance for high-frequency switching. These devices also feature extremely low drain-source on-state resistance. The low gate charge and on-resistance of these MOSFETs translate into lower conduction and switching losses, respectively. Littelfuse offers in-house designed, developed, and manufactured SiC MOSFETs with extremely low gate charge and output capacitance, industry-leading performance, and ruggedness at all temperatures. Littelfuse SiC MOSFETs are available in a range of varieties, including 1200V in 80mΩ, 120mΩ, and 160mΩ versions.