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IXXH80N65B4D1

Name: IXYS IXXH80N65B4D1
Brand: IXYS
SKU: 747-IXXH80N65B4D1
Price: 11.58 EUR
Availability: OutOfStock

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Mouser No:

747-IXXH80N65B4D1

Mfr. No:

IXXH80N65B4D1

Mfr.:

IXYS

Description:

IGBTs Disc IGBT XPT-GenX4 TO-247AD

Datasheet:

IXXH80N65B4D1 Datasheet

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Availability

Stock:: Non-Stocked

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	11,58 €	11,58 €
	8,65 €	86,50 €
	7,47 €	896,40 €
	7,08 €	3.610,80 €
	6,61 €	6.742,20 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	2.1 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	180 A
Pd - Power Dissipation:	625 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	Trench - 650V - 1200V GenX20
Packaging:	Tube
Brand:	IXYS
Continuous Collector Current Ic Max:	180 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Tradename:	XPT

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Datasheet

IXXH80N65B4D1 Datasheet

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TARIC:: 8541290000
USHTS:: 8541290095
ECCN:: EAR99

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