IXTQ30N60P

IXYS
747-IXTQ30N60P
IXTQ30N60P

Mfr.:

Description:
MOSFETs 30.0 Amps 600 V 0.24 Ohm Rds

Datasheet:
ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
27 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 300   Multiples: 30
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,33 € 1.599,00 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
TO-3P-3
- 55 C
+ 150 C
IXTQ30N60
Tube
Brand: IXYS
Channel Mode: Enhancement
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: KR
Fall Time: 25 ns
Forward Transconductance - Min: 25 S
Id - Continuous Drain Current: 30 A
Mounting Style: Through Hole
Number of Channels: 1 Channel
Pd - Power Dissipation: 540 W
Product Type: MOSFETs
Rds On - Drain-Source Resistance: 240 mOhms
Rise Time: 20 ns
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 80 ns
Typical Turn-On Delay Time: 29 ns
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs - Gate-Source Voltage: - 30 V, 30 V
Unit Weight: 5,500 g
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Attributes selected: 0

Datasheet

PCN

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

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