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IXTP120N20X4

Name: IXYS IXTP120N20X4
Brand: IXYS
SKU: 747-IXTP120N20X4
Price: 8.16 EUR
Availability: InStock

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Mouser No:

747-IXTP120N20X4

Mfr. No:

IXTP120N20X4

Mfr.:

IXYS

Description:

MOSFETs 200V, 120A, Ultra junction X4, TO-220 package, MOSFET

Datasheet:

IXTP120N20X4 Datasheet (PDF)

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In Stock: 723

Stock:: 723 Can Dispatch Immediately

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Factory Lead Time:: 41 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	8,16 €	8,16 €
	4,51 €	45,10 €
	4,28 €	428,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	9.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	108 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	417 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	12 ns
Forward Transconductance - Min:	72 S
Product Type:	MOSFETs
Rise Time:	24 ns
Series:	IXTx120N20X4
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	100 ns
Typical Turn-On Delay Time:	13 ns

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Datasheet

IXTP120N20X4 Datasheet (PDF)

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TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

IX4 Ultra-Junction Power MOSFETs

IXYS IX4 Ultra-Junction Power MOSFETs are avalanche-rated, N-channel enhancement-mode MOSFETs with a 200V drain-source breakdown voltage. The IXYS IX4 Ultra-Junction Power MOSFETs come in a TO-220 (IXTP) or TO-263 (IXTA) package and offer 86A or 94A continuous drain current.