It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IXTA3N120HV

Name: IXYS IXTA3N120HV
Brand: IXYS
SKU: 747-IXTA3N120HV
Price: 7.87 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

747-IXTA3N120HV

Mfr. No:

IXTA3N120HV

Mfr.:

IXYS

Description:

MOSFETs TO263 1.2KV 3A N-CH HIVOLT

Datasheet:

IXTA3N120HV Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 395

Stock:: 395 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 32 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	7,87 €	7,87 €
	4,33 €	43,30 €
	4,25 €	425,00 €

Alternative Packaging

Mfr. Part No.:

IXTA3N120HV-TRL

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

8,23 €

Min:

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	3 A
Rds On - Drain-Source Resistance:	4.5 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	42 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	200 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	18 ns
Product Type:	MOSFETs
Rise Time:	15 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	17 ns
Unit Weight:	4 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IXTA3N120HV Datasheet

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.