IXTA36N30P

Name: IXYS IXTA36N30P
Brand: IXYS
SKU: 747-IXTA36N30P
Price: 4.82 EUR
Availability: InStock

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Mouser No:

747-IXTA36N30P

Mfr. No:

IXTA36N30P

Mfr.:

IXYS

Datasheet:

ECAD Model:

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	300 V
Id - Continuous Drain Current:	36 A
Rds On - Drain-Source Resistance:	110 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	70 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	28 ns
Product Type:	MOSFETs
Rise Time:	30 ns
Series:	IXTA36N30
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	97 ns
Typical Turn-On Delay Time:	24 ns
Unit Weight:	1,600 g