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IXGH50N90B2D1

Name: IXYS IXGH50N90B2D1
Brand: IXYS
SKU: 747-IXGH50N90B2D1
Price: 14.43 EUR
Availability: InStock

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Mouser No:

747-IXGH50N90B2D1

Mfr. No:

IXGH50N90B2D1

Mfr.:

IXYS

Description:

IGBTs 50 Amps 900V 2.7 Rds

Datasheet:

IXGH50N90B2D1 Datasheet

ECAD Model:

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In Stock: 300

Stock:: 300 Can Dispatch Immediately

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Factory Lead Time:: 57 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	14,43 €	14,43 €
	10,62 €	106,20 €
	8,93 €	1.071,60 €
	8,92 €	4.549,20 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247AD-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	900 V
Collector-Emitter Saturation Voltage:	2.7 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	75 A
Pd - Power Dissipation:	400 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	IXGH50N90
Packaging:	Tube
Brand:	IXYS
Continuous Collector Current Ic Max:	200 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Tradename:	HiPerFAST
Unit Weight:	6,500 g

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Datasheet

IXGH50N90B2D1 Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

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