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IXFN82N60P

Name: IXYS IXFN82N60P
Brand: IXYS
SKU: 747-IXFN82N60P
Price: 34.36 EUR
Availability: InStock

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Mouser No:

747-IXFN82N60P

Mfr. No:

IXFN82N60P

Mfr.:

IXYS

Description:

MOSFET Modules DIODE Id82 BVdass600

Datasheet:

IXFN82N60P Datasheet

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In Stock: 165

Stock:: 165

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On Order:: 300
Factory Lead Time:: 27

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	34,36 €	34,36 €
	28,08 €	280,80 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFET Modules
RoHS:
Technology:	Si
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	72 A
Rds On - Drain-Source Resistance:	75 mOhms
Vgs - Gate-Source Voltage:	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.04 kW
Series:	IXFN82N60
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	24 ns
Height:	12.22 mm
Length:	38.23 mm
Product Type:	MOSFET Modules
Rise Time:	23 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Tradename:	HiPerFET
Type:	Polar HiPerFET Power MOSFET
Typical Turn-Off Delay Time:	79 ns
Typical Turn-On Delay Time:	28 ns
Width:	25.42 mm
Unit Weight:	30 g

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Datasheet

IXFN82N60P Datasheet

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TARIC:: 8541290000
CNHTS:: 8504409190
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Polar HiPerFET Power MOSFETs

IXYS Polar™ HiPerFETs Power MOSFETs combine the strengths of the Polar Standard family with a faster body diode. The faster body diode's reverse recovery time (t_rr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of MOSFETs provides the lowest R_DS(on), low R_thJC, low Q_g, and enhanced dv/dt capability.