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IXFN180N25T

Name: IXYS IXFN180N25T
Brand: IXYS
SKU: 747-IXFN180N25T
Price: 26.78 EUR
Availability: OutOfStock

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Mouser No:

747-IXFN180N25T

Mfr. No:

IXFN180N25T

Mfr.:

IXYS

Description:

MOSFET Modules 155A 250V

Datasheet:

IXFN180N25T Datasheet

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Factory Lead Time:: 23 Weeks Estimated factory production time.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	26,78 €	26,78 €
	20,80 €	208,00 €
	19,72 €	1.972,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFET Modules
RoHS:
Technology:	Si
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	250 V
Id - Continuous Drain Current:	168 A
Rds On - Drain-Source Resistance:	12.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	900 W
Series:	IXFN180N25
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	20 ns
Height:	12.22 mm
Length:	38.23 mm
Product Type:	MOSFET Modules
Rise Time:	52 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Tradename:	HiPerFET
Type:	GigaMOS Power MOSFET
Typical Turn-Off Delay Time:	88 ns
Typical Turn-On Delay Time:	35 ns
Width:	25.42 mm
Unit Weight:	30 g

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Datasheet

IXFN180N25T Datasheet

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TARIC:: 8541500000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85415001
ECCN:: EAR99

Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low R_DS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.