IS66WV51216EALL-70BLI

ISSI
870-S66WV51216EA70BI
IS66WV51216EALL-70BLI

Mfr.:

Description:
SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,1.7v 1.95v,48 Ball BGA (6x8mm), RoHS

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
12 Weeks Estimated factory production time.
Minimum: 480   Multiples: 480
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,04 € 1.459,20 €
3,03 € 2.908,80 €
2,98 € 8.582,40 €

Product Attribute Attribute Value Select Attribute
ISSI
Product Category: SRAM
RoHS:  
8 Mbit
512 k x 16
70 ns
Parallel
1.95 V
1.7 V
25 mA
- 40 C
+ 85 C
SMD/SMT
BGA-48
Brand: ISSI
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Memory Type: SRAM
Moisture Sensitive: Yes
Product Type: SRAM
Series: IS66WV51216EBLL
Factory Pack Quantity: 480
Subcategory: Memory & Data Storage
Type: Asynchronous
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Attributes selected: 0

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TARIC:
8542324500
CNHTS:
8542320000
CAHTS:
8542320030
USHTS:
8542320002
MXHTS:
8542320201
ECCN:
EAR99

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.