IS43QR85120B-083RBLI

ISSI
870-43QR85120B3RBLI
IS43QR85120B-083RBLI

Mfr.:

Description:
DRAM 4G, 1.2V, DDR4, 512Mx8, 2400MT/s @ 16-16-16, 78 ball BGA (10mm x14mm) RoHS, IT

ECAD Model:
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In Stock: 343

Stock:
343 Can Dispatch Immediately
Factory Lead Time:
32 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 20
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
21,28 € 21,28 €
19,71 € 197,10 €

Product Attribute Attribute Value Select Attribute
ISSI
Product Category: DRAM
RoHS:  
SDRAM - DDR4
4 Gbit
8 bit
1.2 GHz
FBGA-78
512 M x 8
1.14 V
1.26 V
- 40 C
+ 95 C
Brand: ISSI
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 136
Subcategory: Memory & Data Storage
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Attributes selected: 0

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CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

DDR4 DRAM

ISSI DDR4 DRAM is a high-speed dynamic random-access memory device internally organized with an eight-bank setup. Double Data Rate 4 Synchronous Dynamic Random Access Memory banks are organized into two groups, each with four DRAM banks. DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed operation. ISSI 4GB DDR4 SDRAM devices deliver high-speed data transfer rates up to 2666Mbps, making them ideal for telecom and networking, automotive, and industrial embedded computing.