ADPA7009-2ACEZ

ADPA7009-2 GaAs pHEMT MMIC Power Amplifier

Analog Devices Inc. ADPA7009-2 GaAs pHEMT MMIC Power Amplifier is a gallium arsenide (GaAs), pseudomorphic high-electron-mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.5W power amplifier. The device comes with an integrated temperature-compensated, on-chip power detector that operates between 20GHz and 54GHz. The amplifier provides a gain of 17.5dB, an output power for 1dB compression (OP1dB) of 28dBm, and a typical output third-order intercept (OIP3) of 34.5dBm at 20GHz to 35GHz. The ADPA7009-2 requires 850mA from a 5V supply voltage (VDDx). The RF input and outputs are internally matched and DC-blocked for easy integration into higher-level assemblies. Most of the typically required external passive components for operation (AC coupling capacitors and power supply decoupling capacitors) are integrated, facilitating a small, compact printed circuit board (PCB) footprint. The Analog Devices Inc. ADPA7009-2 is available in a 5.00mm × 5.00mm, 24-terminal chip array, small outline, no lead cavity [LGA_CAV] package.

RF Solutions

Analog Devices offers components that cover the complete high speed and RF signal chain. The portfolio enables design engineers to develop platform electronic test and measurement systems that have best-in-class performance and low cost of test and ownership across an ever increasing frequency range from DC to > 100GHz and beyond. As the preeminent supplier of data converters, RF and microwave ICs, Analog Devices provides more than 2,000 high performance products across the entire frequency spectrum.
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