AS6C6416-55TIN

Alliance Memory
913-AS6C6416-55TIN
AS6C6416-55TIN

Mfr.:

Description:
SRAM 64M 3V 55ns Low Power 4096k x 16

ECAD Model:
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In Stock: 191

Stock:
191 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
37,20 € 37,20 €
34,40 € 344,00 €
33,29 € 832,25 €
31,70 € 1.585,00 €
30,88 € 2.964,48 €
30,80 € 8.870,40 €
576 Quote

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: SRAM
RoHS:  
64 Mbit
4 M x 16
55 ns
Parallel
3.6 V
2.7 V
20 mA
- 40 C
+ 85 C
SMD/SMT
TSOP-48
Tray
Brand: Alliance Memory
Country of Assembly: TW
Country of Diffusion: Not Available
Country of Origin: TW
Memory Type: SDR
Moisture Sensitive: Yes
Product Type: SRAM
Series: AS6C6416-55
Factory Pack Quantity: 96
Subcategory: Memory & Data Storage
Type: Asynchronous
Unit Weight: 29,828 g
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Attributes selected: 0

TARIC:
8542324500
CNHTS:
8542329010
CAHTS:
8542320030
USHTS:
8542320041
MXHTS:
8542320201
ECCN:
3A991.b.2.a

Low Power CMOS SRAM

Alliance Memory Low Power Asynchronous Static Random Access Memory (SRAM) devices are fabricated using high-performance, high-reliability CMOS technology. Alliance Memory CMOS SRAM devices are designed for low-power applications and are particularly well-suited for battery backup nonvolatile memory applications. AS6C8008 is a 8,388,608-bit device organized as 1,048,576 words by 8-bits. AS6C1616 is a 16,777,216-bit device organized as 1,048,576 words by 16-bits. AS6C6264A is a 65,536-bit device organized as 8,192 words by 8 bits. AS6C62256 is a 262,144-bit device organized as 32,768 words by 8-bits. Available in different packages/cases.