AS4C8M32S-7TCN

Alliance Memory
913-AS4C8M32S-7TCN
AS4C8M32S-7TCN

Mfr.:

Description:
DRAM SDRAM, 256Mb, 8M X 32, 3.3V, 86 Pin TSOP II, 166 MHz, Commercial Temp - Tray

ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

Factory Lead Time:
20 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
8,28 € 8,28 €
7,71 € 77,10 €
7,47 € 186,75 €
7,29 € 364,50 €
7,07 € 763,56 €
6,81 € 1.470,96 €
6,60 € 3.564,00 €
6,36 € 6.868,80 €
2.160 Quote

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM
256 Mbit
32 bit
143 MHz
TSOP-II-86
8 M x 32
5 ns
3 V
3.6 V
0 C
+ 70 C
AS4C8M32S
Tray
Brand: Alliance Memory
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 108
Subcategory: Memory & Data Storage
Supply Current - Max: 100 mA
Unit Weight: 4,178 g
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Attributes selected: 0

CNHTS:
8542319090
USHTS:
8542320024
JPHTS:
854232021
MXHTS:
8542320201
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.