AS4C64M8SC-7TIN

Alliance Memory
913-AS4C64M8SC-7TIN
AS4C64M8SC-7TIN

Mfr.:

Description:
DRAM SDRAM, 512MB, 64M X 8, 3.3V, 54PIN TSOP II, 133 MHZ, Industrial Temp - Tray

Datasheet:
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Learn more about Alliance Memory AS4C64M8SC-7TIN

In Stock: 15

Stock:
15 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
22,16 € 22,16 €
20,54 € 205,40 €
19,88 € 497,00 €
19,40 € 970,00 €
18,92 € 2.043,36 €
18,28 € 3.948,48 €
17,46 € 9.428,40 €
1.080 Quote

Alternative Packaging

Mfr. Part No.:
MT48LC64M8A2P-75:C
Packaging:
Tray
Availability:
In Stock
Price:
14,65 €
Min:
1
Mfr. Part No.:
MT48LC64M8A2TG-75:C
Packaging:
Tray
Availability:
In Stock
Price:
13,43 €
Min:
1

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM
512 Mbit
8 bit
133 MHz
TSOP-II-54
64 M x 8
17 ns
3 V
3.6 V
- 40 C
+ 85 C
AS4C64M8SC
Tray
Brand: Alliance Memory
Country of Assembly: TW
Country of Diffusion: TW
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 108
Subcategory: Memory & Data Storage
Supply Current - Max: 60 mA
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Attributes selected: 0

Datasheet

USHTS:
8542320028
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.

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